| PART |
Description |
Maker |
| BGF1801-10 |
GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NE5510279A-T1 NE5510279A |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| AWB7122P7 AWB7122P8 AWB7122P9 |
1805 MHz to 1880 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| BGF1901-10 |
GSM1900 EDGE power module
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS[ANADIGICS, Inc]
|
| AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| SM1819-52LD |
1805 - 1880 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
| CXG1017 CXG1017N |
GSM1800/1900 DPDT TX/RX Antenna Switch
|
http://
SONY[Sony Corporation]
|
| TQM7M5005 |
GSM/EDGE Multi-mode Power Amplifier Module
|
TriQuint Semiconductor
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
